PART |
Description |
Maker |
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
CY7C0832AV CY7C0830AV CY7C0831AV CY7C0837AV CY7C08 |
FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM(FLEx18 3.3V 64K/128K x 3628K/256K x 18同步双端口RAM) FLEx18 3.3 64K/128K × 3628K/256K × 18同步双口RAMFLEx18 3.3 64K/128K × 3628K/256K × 18同步双端口RAM)的
|
Cypress Semiconductor Corp.
|
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM 133MHz 8.5ns 256K x 36 9Mb sync burst SRAM 150MHz 7.5ns 256K x 36 9Mb sync burst SRAM 166MHz 7ns 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT Integrated Device Technology, Inc.
|
GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
IS61VF25618A-6.5TQ IS61VF25618A-6.5B3 IS61VF12836A |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PQFP100 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PBGA165 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp. Sharp Corporation Sharp Electrionic Components Sharp Electronics Corp.
|
GS88018BT-333 GS88018BT-333I GS88018BT-300 GS88018 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|